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Radiated disturbance characteristics of SiC MOSFET module
Huazhen Huang Ningyan Wang Jialing Wu Tiebing Lu
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
ISSN : 1598 - 2092
eISSN : 2093 - 4718